收藏本站
NTD70N03R
Power MOSFET
72 A, 25 V, N-Channel DPAK
Features
?
?
?
?
?
Planar HD3e Process for Fast Switching Performance
Low R DS(on) to Minimize Conduction Loss
Low C ISS to Minimize Driver Loss
Low Gate Charge
Pb-Free Packages are Available
V (BR)DSS
25 V
http://onsemi.com
R DS(on) TYP
5.6 m W
I D MAX
72 A
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
N-Channel
D
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
25
Unit
V dc
Gate-to-Source Voltage - Continuous
Thermal Resistance - Junction-to-Case
Total Power Dissipation @ T C = 25 ° C
Drain Current
- Continuous @ T C = 25 ° C, Chip
- Continuous @ T C = 25 ° C, Limited by Package
- Continuous @ T A = 25 ° C, Limited by Wires
- Single Pulse (t p = 10 m s)
V GS
R q JC
P D
I D
I D
I D
I DM
± 20
2.4
62.5
72.0
62.8
32
140
V dc
° C/W
W
A
A
A
A
G
S
MARKING DIAGRAMS
Thermal Resistance - Junction-to-Ambient
(Note1)
Total Power Dissipation @ T A = 25 ° C
Drain Current - Continuous @ T A = 25 ° C
Thermal Resistance - Junction-to-Ambient
(Note2)
Total Power Dissipation @ T A = 25 ° C
Drain Current - Continuous @ T A = 25 ° C
Operating and Storage Temperature Range
R q JA
P D
I D
R q JA
P D
I D
T J , T stg
80
1.87
12.0
110
1.36
10.0
-55 to
° C/W
W
A
° C/W
W
A
° C
4
1 2
3
DPAK
CASE 369AA
STYLE 2
1
Gate
4
Drain
2
Drain
3
Source
175
Single Pulse Drain-to-Source Avalanche
Energy - Starting T J = 25 ° C
E AS
71.7
mJ
4
4
Drain
(V DD = 30 V dc , V GS = 10 V dc , I L = 12 A pk ,
L = 1 mH, R G = 25 W )
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from Case for 10 s
Stresses exceeding Maximum Ratings may damage the device. Maximum
1
2
3
Ratings are stress ratings only. Functional operation above the Recommended
DPAK
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
CASE 369D
STYLE 2
70N03
Y
WW
G
1 2 3
Gate Drain Source
= Device Code
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 10
1
Publication Order Number:
NTD70N03R/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NTD78N03T4G MOSFET N-CHAN 25V 78A DPAK
NTD80N02-1G MOSFET N-CH 24V 80A IPAK
NTD85N02R-001 MOSFET N-CH 24V 12A IPAK
NTD95N02RT4G MOSFET N-CH 24V 12A DPAK
NTDV18N06LT4G MOSFET N-CH 60V 18A DPAK
NTDV20N06T4G MOSFET N-CH 60V 20A DPAK
NTDV3055L104-1G MOSFET N-CH 60V 12A IPAK
NTDV5804NT4G MOSFET N-CH 40V 69A DPAK
相关代理商/技术参数
NTD70N03RG 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD70N03RT4 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD70N03RT4G 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD78N03 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD78N03-001 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD78N03-035 功能描述:MOSFET 25V 78A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD78N031 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single Na??Channel, DPAK
NTD78N031G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 78 A, Single Na??Channel, DPAK